Phone
+34 936344632 ext. 440641
Academic profiles
Personal Information
Educational Background
- Ramón y Cajal Fellow at ICTJA, 2004-2008
- Postdoctoral Researcher at the School of Physics and Astronomy, University of Nottingham, 2002-2004
- Ph.D., Physics, 2001, University of Barcelona
Research Interests
Jordi Ibáñez-Insa is a Materials Scientist specialized in using different analytical tools like X-ray diffraction (XRD), X-ray fluorescence (XRF), Raman spectroscopy or optical techniques (FTIR, optical absorption/reflectance, hyperspectral imaging). His current research is focused on the investigation of the fundamental (structural, vibrational, optical) properties at ambient conditions and at high pressures of crystalline solids, including Earth materials, rare minerals, meteorites, or technologically-important compounds (advanced materials). Starting from 2010, he is the Scientific Director of GEO3BCN’s X-ray Diffraction Laboratory, which offers support to GEO3BCN researchers and also to external users from public and private universities and companies worldwide. This has allowed him to initiate new lines of research related to mineralogy (powder XRD) and geochemistry (portable XRF), as well as to stablish new collaborations with several national and international research groups on different topics like planetary science, archaeology, cultural heritage, or construction materials. One of the milestones of his recent work includes the discovery of the new mineral abellaite, approved by the International Mineralogy Association in 2014, which has recently triggered new research work on rare minerals, mineral deposits and critical materials.
Active Projects
Past Projects
PUBLICATIONS
2023
2022
2021
2020
2019
2018
2017
2016
2015
2013
PREVIOUS SELECTED PUBLICATIONS
Alarcón-Lladó, E., J. Ibáñez, R. Cuscó, L. Artús, S. V. Novikov, and C. T. Foxon (2009), Raman scattering study of cubic GaN and GaMnN epilayers grown by plasma- assisted molecular beam epitaxy, Semiconductor Science and Technology, 24(11), doi: 10.1088/0268-1242/24/11/115019.
Alarcón-Lladó, E., J. Ibáñez, R. Cuscó, L. Artús, J. D. Prades, S. Estradé, and J. R. Morante (2011), Ultraviolet Raman scattering in ZnO nanowires: Quasimode mixing and temperature effects, Journal of Raman Spectroscopy, 42(2), 153-159, doi: 10.1002/jrs.2664.
Alarcón-Lladó, E., S. Estradé, J. D. Prades, F. Hernandez-Ramírez, J. Arbiol, F. Peiró, J. Ibáñez, L. Artús, and J. R. Morante (2011), Substrate effects on the structural and photoresponse properties of CVD grown ZnO nanostructures: Alumina vs. silica, CrystEngComm, 13(2), 656-662, doi: 10.1039/c0ce00196a.
Cuscó, R., J. Ibáñez, E. Alarcón-Lladó, L. Artús, T. Yamaguchi, and Y. Nanishi (2009a), Photoexcited carriers and surface recombination velocity in InN epilayers: A Raman scattering study, Physical Review B - Condensed Matter and Materials Physics, 80(15), doi: 10.1103/PhysRevB.80.155204.
Cuscó, R., J. Ibáñez, E. Alarcón-Lladó, L. Artús, T. Yamaguchi, and Y. Nanishi (2009b), Raman scattering study of the long-wavelength longitudinal-optical-phonon- plasmon coupled modes in high-mobility InN layers, Physical Review B - Condensed Matter and Materials Physics, 79(15), doi: 10.1103/PhysRevB.79.155210.
Ibáñez, J., A. Rapaport, C. Boney, R. Oliva, R. Cuscó, A. Bensaoula, and L. Artús (2012), Raman scattering by folded acoustic phonons in InGaN/GaN superlattices, Journal of Raman Spectroscopy, 43(2), 237-240, doi: 10.1002/jrs.3028.
Ibáñez, J., A. Segura, B. García-Domene, R. Oliva, F. J. Manjón, T. Yamaguchi, Y. Nanishi, and L. Artús (2012), High-pressure optical absorption in InN: Electron density dependence in the wurtzite phase and reevaluation of the indirect band gap of rocksalt InN, Physical Review B - Condensed Matter and Materials Physics, 86(3), doi: 10.1103/PhysRevB.86.035210.
Ibáñez, J., F. J. Manjón, A. Segura, R. Oliva, R. Cuscó, R. Vilaplana, T. Yamaguchi, Y. Nanishi, and L. Artús (2011), High-pressure Raman scattering in wurtzite indium nitride, Applied Physics Letters, 99(1), doi: 10.1063/1.3609327.
Ibáñez, J., R. Oliva, M. De La Mare, M. Schmidbauer, S. Hernández, P. Pellegrino, D. J. Scurr, R. Cuscó, L. Artús, M. Shafi, R. H. Mari, M. Henini, Q. Zhuang, A. Godenir, and A. Krier (2010), Structural and optical properties of dilute InAsN grown by molecular beam epitaxy, Journal of Applied Physics, 108(10), doi: 10.1063/1.3509149.
Jiménez-Riobóo, R. J., R. Cuscó, R. Oliva, N. Domènech-Amador, C. Prieto, J. Ibáñez, C. Boney, A. Bensaoula, and L. Artús (2012), Brillouin scattering determination of the surface acoustic wave velocity in In xGa 1-xN: A probe into the elastic constants, Applied Physics Letters, 101(6), doi: 10.1063/1.4744961.
Kudrawiec, R., M. Latkowska, G. Sȩk, J. Misiewicz, J. Ibáñez, M. Henini, and M. Hopkinson (2009), Fine structure of the localized emission from GaInNAs layers studied by micro-photoluminescence, Acta Physica Polonica A, 116(5), 930-932.
Kudrawiec, R., M. Syperek, P. Poloczek, J. Misiewicz, R. H. Mari, M. Shafi, M. Henini, Y. G. Gobato, S. V. Novikov, J. Ibáñez, M. Schmidbauer, and S. I. Molina (2009), Carrier localization in GaBiAs probed by photomodulated transmittance and photoluminescence, Journal of Applied Physics, 106(2), doi: 10.1063/1.3168429.
Kudrawiec, R., P. Poloczek, J. Misiewicz, M. Shafi, J. Ibáñez, R. H. Mari, M. Henini, M. Schmidbauer, S. V. Novikov, L. Turyanska, S. I. Molina, D. L. Sales, and M. F. Chisholm (2009), Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates, Microelectronics Journal, 40(3), 537-539, doi: 10.1016/j.mejo.2008.06.025.
Latkowska, M., R. Kudrawiec, G. Sek, J. Misiewicz, J. Ibanez, M. Hopkinson, and M. Henini (2011), Micro-photoluminescence of GaInNAs layers grown on GaAs substrates of various crystallographic orientations, Physica Status Solidi (C) Current Topics in Solid State Physics, 8(5), 1655-1658, doi: 10.1002/pssc.201000834.
Oliva, R., J. Ibáñez, R. Cuscó, R. Kudrawiec, J. Serafinczuk, O. Martnez, J. Jiménez, M. Henini, C. Boney, A. Bensaoula, and L. Artús (2012), Raman scattering by the E 2h and A 1(LO) phonons of In xGa 1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy, Journal of Applied Physics, 111(6), doi: 10.1063/1.3693579.
Pastor, D., J. Olea, M. Toledano-Luque, I. Mártil, G. González-Díaz, J. Ibañez, R. Cuscó, and L. Artús (2009), Pulsed laser melting effects on single crystal gallium phosphide.
Pastor, D., J. Olea, A. Del Prado, E. García-Hemme, I. Mártil, G. González-Díaz, J. Ibáñez, R. Cuscó, and L. Artús (2011a), UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation, Semiconductor Science and Technology, 26(11), doi: 10.1088/0268-1242/26/11/115003.
Pastor, D., J. Olea, A. Del Prado, E. García-Hemme, I. Mártil, G. González-Díaz, J. Ibáñez, R. Cuscó, and L. Artús (2011b), Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers.
Queralt, I., J. Ibañez, E. Marguí, and J. Pujol (2010), Thickness measurement of semiconductor thin films by energy dispersive X-ray fluorescence benchtop instrumentation: Application to GaN epilayers grown by molecular beam epitaxy, Spectrochimica Acta - Part B Atomic Spectroscopy, 65(7), 583-586, doi: 10.1016/j.sab.2010.05.008.
Valdueza-Felip, S., J. Ibáñez, E. Monroy, M. González-Herráez, L. Artús, and F. B. Naranjo (2012), Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer, Thin Solid Films, 520(7), 2805-2809, doi: 10.1016/j.tsf.2011.12.034.
